发明名称 |
Self-timed read and write assist and restore circuit |
摘要 |
A read and write assist and restore circuit for a memory device includes a first device, which is responsive to a potential on a bit line such that the potential on the bit line activates the first device. A second device is driven by the first device such that when the first device is activated, a change in the bit line potential is reinforced with positive feedback by the second device during a wordline active period to enable write-back of data lost as a result of threshold voltage fluctuations in memory cell transistors coupled to the bit line.
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申请公布号 |
US6788566(B1) |
申请公布日期 |
2004.09.07 |
申请号 |
US20030694698 |
申请日期 |
2003.10.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BHAVNAGARWALA AZEEZ J.;KOSONOCKY STEPHEN V.;JOSHI RAJIV V. |
分类号 |
G11C7/12;G11C11/00;G11C11/413;(IPC1-7):G11C11/00 |
主分类号 |
G11C7/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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