发明名称 |
Etch stop layer for etching FinFET gate over a large topography |
摘要 |
A method of forming a gate for a Fin Field Effect Transistor (FinFET) is provided. The method includes forming a first layer of material over a fin and forming a second layer over the first layer. The second layer includes either Ti or TiN. The method further includes forming a third layer over the second layer. The third layer includes an anti-reflective coating. The method also includes etching the first, second and third layers to form the gate for the FinFET.
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申请公布号 |
US6787476(B1) |
申请公布日期 |
2004.09.07 |
申请号 |
US20030632989 |
申请日期 |
2003.08.04 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
DAKSHINA-MURTHY SRIKANTESWARA;TABERY CYRUS E.;YANG CHIH-YUH;YU BIN |
分类号 |
H01L21/311;H01L21/336;H01L29/49;H01L29/786;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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