发明名称 |
Overcurrent protection structure of load driving circuit |
摘要 |
An electrical load driving circuit is provided which includes an insulated gate transistor and a control voltage limiting circuit. The transistor works to supply the power to an electrical load selectively. The control voltage limiting circuit includes a control circuit and a switching circuit. The control circuit works to limit a voltage applied to the transistor selectively to one of a higher controlled voltage and a lower controlled voltage. The switching circuit is disposed across the transistor and closed selectively to limit the voltage applied to the transistor to the second controlled voltage through the control circuit when it is determined that an overcurrent has occurred which flows through the transistor.
|
申请公布号 |
US6788128(B2) |
申请公布日期 |
2004.09.07 |
申请号 |
US20030413090 |
申请日期 |
2003.04.14 |
申请人 |
DENSO CORPORATION |
发明人 |
TSUCHIDA MASAHIRO |
分类号 |
H02H3/087;H02H3/093;H02M3/00;H03K17/08;H03K17/082;H03K17/687;(IPC1-7):H03B1/00 |
主分类号 |
H02H3/087 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|