METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE TO PREVENT SIDEWALL FENCE FROM BEING COLLAPSED BY ETCH DAMAGE

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to prevent a sidewall fence from being collapsed by etch damage by patterning a polysilicon layer and an insulation layer to expose grooves of one and the other sides of both surfaces of a contact hole and by forming and blanket-etching a polysilicon layer to form a cylindrical capacitor made of a polysilicon layer pattern. CONSTITUTION: An insulation layer pattern including a contact hole is formed on a semiconductor substrate. An insulation spacer is formed on the inner wall of the insulation layer pattern. The first polysilicon layer is formed to fill the contact hole. The first photoresist layer pattern is formed on the first polysilicon layer. By using the first photoresist layer pattern, the first polysilicon layer and the insulation layer are etched to form grooves at one and the other sides of both surfaces of the contact hole. The first insulation layer(32) is formed. The second photoresist layer pattern s formed on the first insulation layer. By using the second photoresist layer pattern as a mask, a patterning process is performed to expose the grooves at the one and the other sides of both surfaces of the contact hole. The second polysilicon layer(46) is formed on the resultant structure to fill the groove. The second polysilicon layer and the first insulation layer are etched to form a cylindrical storage node composed of the first polysilicon layer and the second polysilicon layer pattern of a spacer type.