SEMICONDUCTOR DEVICE HAVING RECESS CHANNEL AND FABRICATING METHOD THEREOF, FOR REDUCING SHORT CHANNEL EFFECT

摘要

PURPOSE: A semiconductor device having a recess channel and a fabricating method thereof are provided to form the recess channel longer than a gate electrode by forming a channel of a MOS transistor along an epitaxial layer under a lateral part and a bottom part of the gate electrode. CONSTITUTION: An active pattern(103) is formed on a surface of a semiconductor substrate(100). A gate electrode(127) is formed on the active pattern. An epitaxial layer(110) is formed on both sides of the gate electrode. The epitaxial layer is lower than the gate electrode in order to project a top part of the gate electrode. A spacer(126b) is formed on a lateral portion of the top part of the gate electrode and an upper part of the epitaxial layer. A doping region(130) is formed on both sides of the gate electrode and the upper part of the epitaxial layer.