METHOD FOR FORMING CAPACITOR TO PREVENT PERMEATION OF LAL SOLUTION

摘要

PURPOSE: A method for forming a capacitor is provided to prevent permeation of LAL solution in a wet-etch process by forming an uneven part between a storage node electrode and an etch-stop layer. CONSTITUTION: An etch-stop layer(218) including the first nitride layer, an oxide layer, and the second nitride layer is formed on a substrate having an exposed conductive pattern. An insulating layer is formed on the etch-stop layer. An opening part is formed by etching the insulating layer and the etch-stop layer. The inside of the etch-stop layer is formed with an uneven part by performing a wet-etch process. A storage node electrode(230a) is formed on the inside and the bottom of the opening part. A dielectric layer(232) and a plate electrode(234) are formed on the surface of the storage node electrode.