PLASMA PROCESSING APPARATUS AND METHOD WITH IMPROVED STABILITY OF MASS PRODUCTION

摘要

PURPOSE: A plasma processing apparatus is provided to obtain excellent stability of mass production by controlling a deposition layer deposited on the inner wall of a vacuum receptacle. CONSTITUTION: A gas ring constitutes a part of a vacuum process chamber(2), including an outflow hole of process gas. The upper part of the gas ring is coated with a belljar to form the vacuum process chamber. An antenna supplies a high frequency electric field to the inside of the vacuum process chamber to generate plasma(6), disposed above the belljar. A mounting table(5) on which a specimen is placed is installed in the vacuum process chamber. A high frequency bias voltage is applied to a faraday shield(8) disposed between the antenna and the belljar. A dusting plate is detachably installed in the inner surface of the gas ring except the outflow hole of the process gas. The area of the inner surface of the gas ring including the dusting plate capable of being seen from the specimen is set to be about a half of the area of the specimen.