METHOD AND APPARATUS FOR INSPECTING EDGE EXPOSURE AREA OF WAFER TO MEASURE WIDTH BETWEEN EDGES OF PHOTORESIST LAYER

摘要

PURPOSE: A method and an apparatus for inspecting an edge exposure area of a wafer are provided to measure the width of the edge exposure area by comparing the measured reflectance with the reference reflectance. CONSTITUTION: A rotating process is performed to rotate a wafer(S110). An irradiation process is performed to irradiate predetermined beams along an edge part of the wafer(S120). A measurement process is performed to measure the reflectance of the beams reflected from the edge part of the wafer(S130,S140). Width of an edge exposure area of a wafer is produced by comparing the measured reflectance with the reference reflectance(S150,S160).