| 摘要 |
A nonvolatile ferroelectric memory includes a top cell array block and a bottom cell array block, each array block having sub cell array blocks, each sub cell array block having a plurality of unit cells; a plurality of main bitlines arranged in one direction in correspondence to a column unit of the sub cell array blocks; a plurality of sub bitlines each connected to one terminal of one of the plurality of unit cells arranged in a same direction as the one direction of the main bitlines; a sense amplifier block having sense amplifiers between the top cell array block and the bottom cell array block, each sense amplifier for amplifying a signal from the main bitline; sub bitline first switch signal application lines and sub bitline second switch signal application lines for controlling connection of the sub bitlines and the main bitlines, sub bitline pull up signal application lines for controlling pull up of the sub bitlines by a self boost operation, and sub bitline pull down signal application lines for selective pull down of the sub bitlines, which are arranged perpendicular to the sub bitlines in correspondence to the sub cell array blocks; a first switch device in each sub cell array block in correspondence to a column direction for operation under control of the sub bitline first switch signal application line; a second switch device in each sub cell array block in correspondence to a column direction for selective transfer of a signal from the sub bitline pull up signal application line to the sub bitline under the control of the sub line second switch signal application line; and, a third switch device in each sub cell array block in correspondence to a column direction for selective pull down of the sub bitline under control of the sub bitline pull down application line.
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