METHOD FOR FORMING SILICON DIOXIDE LAYER USING SILOXANE COMPOUND BY ALD METHOD

摘要

PURPOSE: A method for forming a silicon dioxide layer using a siloxane compound is provided to improve a characteristic of the silicon dioxide layer by minimizing the amount of residual impurities within the silicon dioxide layer. CONSTITUTION: A chemisorbed layer of the first reactant is formed by supplying the first reactant to a substrate(32,34). The first reactant is formed with a halogen element or a siloxane compound replaced by -NCO group. A silicon dioxide layer is formed on the substrate by supplying the second reactant to the chemisorbed layer of the first reactant(36,38). The first reactant is formed with the siloxane compound of SinOm-1X2n+2 where n is one integer of 2 to 5 and X is F, Cl, Br, I, or NCO.