发明名称 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF FOR IMPROVING A CONTACT RESISTANCE BETWEEN THE METAL PATTERNS AND THE GATE PROTECTION ELECTRODE
摘要 PURPOSE: A TFT array substrate is provided to form metal patterns between a gate protection electrode and a gate pad, to electrically contact the metal patterns with the gate protection electrode. CONSTITUTION: Gate lines(52) are formed on a substrate(51). A data line(54) crosses the gate lines(52), and determines a pixel area. A TFT(T) is formed in a crossed section of the gate lines(52) and the data lines(54). A pixel electrode(72) formed in the pixel area is connected with the TFT(T). A data pad portion(DP) is connected to the data line(54). A gate pad portion(GP) is connected to the gate lines(52). The gate pad portion(GP) comprises as follows. A gate pad(82) is connected to the gate lines(52). A gate insulating film exposes a portion of the gate pad(82). Metal patterns(74) are connected to the exposed gate pad(82). A gate protection electrode(86) is connected to the metal patterns(74).
申请公布号 KR20040077313(A) 申请公布日期 2004.09.04
申请号 KR20030012827 申请日期 2003.02.28
申请人 LG.PHILIPS LCD CO., LTD. 发明人 KIM, UNG GWON
分类号 G02F1/136;(IPC1-7):G02F1/136 主分类号 G02F1/136
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