发明名称 |
CLEANING SOLUTION WHICH CAN RAPIDLY REMOVE A NITRIDE MEMBRANE FROM BEVEL PART OF SUBSTRATE, LOWER PART OF SUBSTRATE, AND UPPER PART OF A MONITORING SUBSTRATE AND METHOD FOR CLEANING SUBSTRATE BY USING THE SAME |
摘要 |
PURPOSE: A cleaning solution is provided, which can rapidly remove a nitride membrane from a bevel part of a substrate, a lower part of a substrate, and an upper part of a monitoring substrate without the damage of the substrate. A method is provided to clean the semiconductor substrate by using the cleaning solution. CONSTITUTION: The cleaning solution contains 10-35wt% of hydrofluoric acid(HF), 10-35wt% of ammonium fluoride(NH4F), and 30-80wt% of deionized water. And the method for cleaning the substrate contains the steps of: preparing the cleaning solution; applying the cleaning solution to the bevel part of the semiconductor substrate or soaking the semiconductor substrate in the cleaning solution to remove the membrane from the bevel part, the lower part of the substrate, or the upper part of the monitoring substrate; rinsing the semiconductor substrate and then drying.
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申请公布号 |
KR20040077043(A) |
申请公布日期 |
2004.09.04 |
申请号 |
KR20030012428 |
申请日期 |
2003.02.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG, JIN HO;LEE, SANG MI;SON, IL HYEON |
分类号 |
H01L21/308;B08B3/08;C11D7/08;C11D7/10;G03F7/32;H01L21/304;H01L21/306;H01L21/311;(IPC1-7):G03F7/32 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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