MRAM WITH SAL LAYER TO INCREASE TOLERANCE WIDTH OF WRITE CURRENT VALUE

摘要

PURPOSE: A MRAM(magnetic random access memory) with an SAL(soft adjacent layer) is provided to increase the tolerance width of a write current value by preventing a write process from being performed on an adjacent MTJ(magnetic tunnel junction) device. CONSTITUTION: The first conductive layer is prepared. The second conductive layer is formed on the first conductive layer, almost orthogonal to the first conductive layer. A magnetoresistance effect device is formed between the first and second conductive layers, including a plurality of free layers disposed along the length direction of the first conductive layer. The spin direction of the free layer is inversely controlled by a total magnetic field generated from the first and second conductive layers. A magnetic layer has a magnetic interaction between the magnetoresistance effect device and the free layer, interposed between the first conductive layer and the magnetoresistance effect device.