METHOD FOR FABRICATING POLYCRYSTALLINE SILICON LAYER AND TFT FABRICATED THEREBY HAVING GOOD CURRENT CHARACTERISTIC

摘要

PURPOSE: A method for fabricating a polycrystalline silicon layer and a TFT fabricated thereby are provided to increase the width of grains and improve a characteristic of the polycrystalline silicon layer by optimizing an irradiation area of crystalline silicon. CONSTITUTION: An overlapped irradiation area of laser beams is more than 0.5 micrometers while an amorphous silicon layer is crystallized by using the laser beams. A method for fabricating a polycrystalline silicon layer is an SLS(Sequential Lateral Solidification) method. A TFT is fabrication by using the polycrystalline silicon layer. In the TFT, the average width of grains of the polycrystalline silicon layer is more than 0.2 micrometers.