发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND ITS OPERATING METHOD, IN WHICH CURRENT CONSUMPTION OF PRECHARGING INPUT/OUTPUT LINES IS REDUCED |
摘要 |
PURPOSE: A semiconductor memory device and its operating method are provided to prevent skew between input/output lines. CONSTITUTION: The semiconductor memory device includes a plurality of input/output line pairs, and a driving circuit which operates in response to the input of a write command signal and drives the input/output line pairs according to external data. The first precharge circuit(130) precharges the input/output line pairs to the first voltage(VCC). The second precharge circuit(140) precharges the input/output line pairs to the second voltage(VCC-Vth,GND) lower than the first voltage. And a timing control circuit disables the first precharge circuit and enables the second precharge signal in response to the input of an active command signal.
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申请公布号 |
KR20040076729(A) |
申请公布日期 |
2004.09.03 |
申请号 |
KR20030012068 |
申请日期 |
2003.02.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JANG, YEONG UK;KIM, GYEONG HO;KIM, JEONG YEOL |
分类号 |
G11C7/10;G11C11/00;G11C11/4096;(IPC1-7):G11C7/10 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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