发明名称 SEMICONDUCTOR MEMORY DEVICE AND ITS OPERATING METHOD, IN WHICH CURRENT CONSUMPTION OF PRECHARGING INPUT/OUTPUT LINES IS REDUCED
摘要 PURPOSE: A semiconductor memory device and its operating method are provided to prevent skew between input/output lines. CONSTITUTION: The semiconductor memory device includes a plurality of input/output line pairs, and a driving circuit which operates in response to the input of a write command signal and drives the input/output line pairs according to external data. The first precharge circuit(130) precharges the input/output line pairs to the first voltage(VCC). The second precharge circuit(140) precharges the input/output line pairs to the second voltage(VCC-Vth,GND) lower than the first voltage. And a timing control circuit disables the first precharge circuit and enables the second precharge signal in response to the input of an active command signal.
申请公布号 KR20040076729(A) 申请公布日期 2004.09.03
申请号 KR20030012068 申请日期 2003.02.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JANG, YEONG UK;KIM, GYEONG HO;KIM, JEONG YEOL
分类号 G11C7/10;G11C11/00;G11C11/4096;(IPC1-7):G11C7/10 主分类号 G11C7/10
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