发明名称 Micro-casted silicon carbide nano-imprinting stamp
摘要 A micro-casted silicon carbide nano-imprinting stamp and method of making a micro-casted silicon carbide nano-imprinting stamp are disclosed. A micro-casting technique is used to form a foundation layer and a plurality of nano-sized features connected with the foundation layer. The foundation layer and the nano-sized features are unitary whole that is made entirely from a material comprising silicon carbide (SiC) which is harder than silicon (Si) alone. As a result, the micro-casted silicon carbide nano-imprinting stamp has a longer service lifetime because it can endure several imprinting cycles without wearing out or breaking. The longer service lifetime makes the micro-casted silicon carbide nano-imprinting stamp economically feasible to manufacture as the manufacturing cost can be recouped over the service lifetime.
申请公布号 US2004169003(A1) 申请公布日期 2004.09.02
申请号 US20040794928 申请日期 2004.03.05
申请人 LEE HEON;JUNG GUN-YOUNG 发明人 LEE HEON;JUNG GUN-YOUNG
分类号 B82B3/00;B81B1/00;B81C1/00;C04B35/565;H01L21/027;H05K3/12;(IPC1-7):H01L29/12 主分类号 B82B3/00
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