| 摘要 |
PURPOSE:To solve problems that conventional techniques have and to provide an integrated single electronic element, which is high in operating temperature and is actuated at room temperatures, at a high yield. CONSTITUTION:Metal wirings 100 and 110 are previously provided and after that, gold fine particles are arranged between electrodes using a method of attaching and detaching an individual gold fine particle 125 on the point of a probe of an interatomic force microscope (an AFM). Accordingly, these gold fine particles can be arranged in fully close proximity to each other at intervals of about 1nm, whereby a tunnel between electron metal fine particles become possible. As the material for a substrate 250, a conductive silicon film is used and as an insulator thin film, a silicon oxide film 211 of a thickness of 100Angstrom is used. Moreover, for fixing the gold fine particles, these gold fine particles (a particle diameter of 20nm) are filled with an amorphous silicon film 220 of a low electrical conductivity. |
