| 摘要 |
PROBLEM TO BE SOLVED: To provide an HF defect evaluating method for SOI wafers which can reduce particle adhesion at the time of preprocessing an SIMOX wafer or a sticking SOI wafer and evaluate HF defects quickly and accurately at the time of automatic defect counting by an optical microscope or the like. SOLUTION: An SOI wafer is stored in a reaction container, and hydrofluoric acid vapor is generated by bubbling a hydrofluoric acid solution by inert gas and supplied to the reaction container in order to use the vapor for etching, so that the number of particles in the vapor is small and also the number of particles stuck to the wafer can be reduced. The HF defects of the SIMOX wafer can be automatically and accurately measured by an automatic defect counter such as a surface inspection device, and the processing capacity of HF defect observation of the SIMOX wafer can be realized. COPYRIGHT: (C)2004,JPO&NCIPI
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