发明名称 Method of making an aligned electrode on a semiconductor structure
摘要 A method of making an electrode on a semiconductor structure comprises utilizing a mask to remove metal from a layer of metal on a semiconductor structure and then using the same mask to remove material from the semiconductor structure. The resulting structure can ultimately form an optoelectronic device, such as an LED.
申请公布号 US2004171245(A1) 申请公布日期 2004.09.02
申请号 US20040798770 申请日期 2004.03.12
申请人 GOTTFRIED MARK 发明人 GOTTFRIED MARK
分类号 H01L21/285;H01L21/308;H01L33/00;H01L33/36;(IPC1-7):H01L21/00 主分类号 H01L21/285
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