| 摘要 |
The antifuse device comprises an insulating layer positioned in the trench, a conductive member positioned above the insulating layer, at least a portion of the conductive member being positioned within the trench, the conductive member adapted to have at least one programming voltage applied thereto, and at least one doped active region formed in the substrate adjacent the trench. The antifuse further comprises at least one conductive contact coupled to the conductive member, and at least one conductive contact coupled to the doped active region. In one illustrative embodiment, the method comprises forming a trench in a semiconducting substrate, forming at least one layer of insulating material in the trench, forming a conductive member in the trench above the at least one layer of insulating material, forming at least one doped active region in the substrate adjacent the trench, forming at least one conductive contact that is coupled to the conductive member and forming at least one conductive contact that is coupled to the at least one doped active region.
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