| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor reliability evaluating device equipped with a wiring layer electromigration characteristic evaluation pattern which is easily formed at a low cost using a minimum reticle set that has two wiring layers and is capable of measuring usual via resistance, and to provide an evaluation method. SOLUTION: The semiconductor reliability evaluating device has a wiring structure composed of a first wiring layer and a second wiring layer which are connected to each other through a plurality of vias formed in an insulating layer interposed between the wiring layers. The first wiring layer and the second wiring layer are formed of metals which are nearly equivalent in resistivity to each other, and different parasitic resistors are added to the first wiring layer and/or the second wiring layer connected to the vias so as to enable the total resistance of current routes passing through each of the vias to differ from each other. COPYRIGHT: (C)2004,JPO&NCIPI |
