| 摘要 |
PROBLEM TO BE SOLVED: To provide a deposition system of silicon carbide films which deposits an epitaxial film accurately and quickly at a minimum required volume of gas in depositing the epitaxial film comprising a silicon carbide (SiC) on a semiconductor substrate. SOLUTION: On the deposition surface of a semiconductor substrate 100 that is held in a vessel 202, a multiple pipe 201 in which a plurality of pipes with different bores are multiplexed is oppositely arranged roughly at a right angle. Then, treated gases G (G1 and G2) for depositing the silicon carbide film are alternately circulated into this multiple pipe 201, so as to deposit the silicon carbide film on the surface of a semiconductor substrate 100. COPYRIGHT: (C)2004,JPO&NCIPI
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