| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a solid-state imaging element wherein no misalignment takes place in element isolation regions. SOLUTION: The manufacturing method of the solid-state imaging element includes the steps of preparing a semiconductor substrate, forming a plurality of photodiodes each having an electric charge part comprising a first conduction type region into the semiconductor substrate, and surrounding around each of the photodiodes annularly without a break and forming the element isolation regions for electrically isolating each of the photodiodes from the other regions through ion implantation of a second conduction type impurity inverse to the first conduction type into the semiconductor substrate within the same step. COPYRIGHT: (C)2004,JPO&NCIPI
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