Methods for forming a thin film on an integrated circuit including soft baking a silicon glass film

摘要

Methods of forming a thin film on an integrated circuit substrate including a stepped portion are provided. A spin on glass (SOG) film is formed on the substrate including the stepped portion to fill a recess defined by the stepped portion. The SOG film is soft baked at a temperature of less than 400° C. The soft baked SOG film is etched and an insulation film is formed on the etched SOG film. Methods of forming a trench isolation film including soft baking an SOG film are also provided.