| 发明名称 |
SEMICONDUCTOR STRUCTURE ON AN EXTREMELY ROUGH SUBSTRATE |
| 摘要 |
The invention relates to a semiconductor structure comprising a substrate (10) or a base layer having a surface whose rugosity is more than 0.5 nm RMS, or whose chemistry is not compatible with molecular adhesion; a layer (14) made of semiconductor material; an adhesion layer (12) disposed between the substrate or the base layer and the layer made of semiconductor material. |
| 申请公布号 |
WO2004075287(A1) |
申请公布日期 |
2004.09.02 |
| 申请号 |
WO2004FR00305 |
申请日期 |
2004.02.11 |
| 申请人 |
SOITEC SILICON ON INSULATOR;RAYSSAC OLIVIER;MARTINEZ MURIEL;BISSON SEPHORAH;PORTIGLIATTI LIONEL |
发明人 |
RAYSSAC OLIVIER;MARTINEZ MURIEL;BISSON SEPHORAH;PORTIGLIATTI LIONEL |
| 分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
| 代理机构 |
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代理人 |
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| 主权项 |
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