发明名称 Cleaning residues from semiconductor structures
摘要 Supercritical carbon dioxide may be utilized to remove resistant residues such as those residues left when etching dielectrics in fluorine-based plasma gases. The supercritical carbon dioxide may include an oxidizer in one embodiment.
申请公布号 US2004171502(A1) 申请公布日期 2004.09.02
申请号 US20030376874 申请日期 2003.02.28
申请人 CLARK SHAN C.;RAMACHANDRARAO VIJAYAKUMAR S.;TURKOT ROBERT B. 发明人 CLARK SHAN C.;RAMACHANDRARAO VIJAYAKUMAR S.;TURKOT ROBERT B.
分类号 C11D3/39;C11D11/00;(IPC1-7):C11D1/00;C11D1/00 主分类号 C11D3/39
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