发明名称 |
Cleaning residues from semiconductor structures |
摘要 |
Supercritical carbon dioxide may be utilized to remove resistant residues such as those residues left when etching dielectrics in fluorine-based plasma gases. The supercritical carbon dioxide may include an oxidizer in one embodiment.
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申请公布号 |
US2004171502(A1) |
申请公布日期 |
2004.09.02 |
申请号 |
US20030376874 |
申请日期 |
2003.02.28 |
申请人 |
CLARK SHAN C.;RAMACHANDRARAO VIJAYAKUMAR S.;TURKOT ROBERT B. |
发明人 |
CLARK SHAN C.;RAMACHANDRARAO VIJAYAKUMAR S.;TURKOT ROBERT B. |
分类号 |
C11D3/39;C11D11/00;(IPC1-7):C11D1/00;C11D1/00 |
主分类号 |
C11D3/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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