| 摘要 |
A transistor component and a method of producing the transistor component having at least one insulated-gate electrode and with lateral and vertical current flow. The transistor component is used for low-loss switching of high currents and is optionally designed in bipolar or MOS technology. The component includes a rear contact connected to a substrate across a highly doped region, where the highly doped region has a concentration profile of the dopant atoms that tapers out smoothly into the interior of the component. The highly doped region can be produced by a diffusion process. |
