| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistive effect device which is easy to design the bias point and has high sensitivity and high reliability, a magnetic head, a magnetic head assembly and a magnetic recorder. SOLUTION: The magnetoresistive effect element has an oxide or a nitride magnetoresistive effect improving layer in a spin valve film. For forming the magnetoresistive effect improving layer, oxygen gas is introduced in an oxidizing chamber approximately at the same time as the irradiation with a rare gas ion plasma after completing the irradiating preparation thereof. This improves the controllability while exposing at a low oxygen rate and a high energy oxidation having an energy assist effect with the rare gas ion or rare gas ion plasma can be realized. |
