发明名称 Method of forming a resist pattern and resist pattern forming apparatus
摘要 A resin layer including a benzophenone compound is formed on a surface of a glass substrate, and a photoresist layer is formed on a surface of the resin layer. The photoresist layer is irradiated with a laser beam with a wavelength of 100 nm to 300 nm to form a latent image, and a resist pattern with recessed and protruding parts are formed in the photoresist layer by developing the photoresist layer in which the latent image has been formed.
申请公布号 US2004170930(A1) 申请公布日期 2004.09.02
申请号 US20040786006 申请日期 2004.02.26
申请人 TDK CORPORATION 发明人 KAWAGUCHI YUUICHI;TAKAHATA HIROAKI;OYAKE HISAJI
分类号 G03F7/11;G03F7/00;G03F7/095;G03F7/20;G03F7/30;G11B7/26;(IPC1-7):G03F7/00 主分类号 G03F7/11
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