发明名称 |
Method of forming a resist pattern and resist pattern forming apparatus |
摘要 |
A resin layer including a benzophenone compound is formed on a surface of a glass substrate, and a photoresist layer is formed on a surface of the resin layer. The photoresist layer is irradiated with a laser beam with a wavelength of 100 nm to 300 nm to form a latent image, and a resist pattern with recessed and protruding parts are formed in the photoresist layer by developing the photoresist layer in which the latent image has been formed.
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申请公布号 |
US2004170930(A1) |
申请公布日期 |
2004.09.02 |
申请号 |
US20040786006 |
申请日期 |
2004.02.26 |
申请人 |
TDK CORPORATION |
发明人 |
KAWAGUCHI YUUICHI;TAKAHATA HIROAKI;OYAKE HISAJI |
分类号 |
G03F7/11;G03F7/00;G03F7/095;G03F7/20;G03F7/30;G11B7/26;(IPC1-7):G03F7/00 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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