发明名称 Semiconductor wafer having separation groove on insulating film on dicing line region and its manufacturing method
摘要 A semiconductor wafer includes a plurality of element-forming regions, a dicing line region and an insulating film. The dicing line region separates the element-forming regions from each other. The insulating film covers the element-forming regions and the dicing line region. The insulating film insulating film is formed of multi-layered insulating layers which insulate respective wiring layers of a multi-layer form. A separation region is formed at least in a portion of the insulating film located on the dicing line region, so that the separation region separates the insulating film on the dicing line region from the insulating film on the element-forming regions.
申请公布号 US2004169258(A1) 申请公布日期 2004.09.02
申请号 US20030732304 申请日期 2003.12.11
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 IIJIMA TOSHITSUNE
分类号 H01L23/522;H01L21/301;H01L21/312;H01L21/768;H01L21/78;H01L23/544;H01L23/58;(IPC1-7):H01L23/544;H01L21/30 主分类号 H01L23/522
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