| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light device having a wide variable wavelength range and outputs a high optical power in varied wavelength. SOLUTION: A TTG-DFB laser oscillator is arranged on the first region of a first conductive type semiconductor substrate. An optical amplifier for receiving and amplifying a laser beam emitted from the laser oscillator is arranged on the second region of the semiconductor substrate. A buried layer is buried in both the sides of the mesa structure of the laser oscillator and the optical amplifier. The optical amplifier includes a second conductive type first clad layer, a second active layer, and a first conductive type second clad layer. The optical amplifier includes a second conductive type lower buried layer and a first conductive type or semi-insulative upper buried layer. The lower buried layer contacts the end of an intermediate layer at the both sides of the mesa structure of the laser oscillator. A thickness of the lower buried layer is determined so that the lower buried layer contacts the end of the first clad layer but does not contact the end of the second active layer at both the sides of the mesa structure of the optical amplifier. COPYRIGHT: (C)2004,JPO&NCIPI
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