| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a ferroelectric capacitor capable of forming a ferroelectric film and an electrode film continuously in the same chamber. SOLUTION: Ru material is supplied into an MOCVD chamber together with nitrogen gas. The above state is maintained so as to form an Ru film. Then, the nitrogen gas is reduced to 20 vol.%, and 80 vol.% oxygen gas as reactive gas is started to be supplied. Moreover, Pb material is made to start feeding, and the Ru material is made to stop feeding immediately after the supply of the Pb material is started. As the result, Ru is reduced in volume as Pb increases in volume in the MOCVD chamber. During the above processes, a lower conductive compound film is formed. After the Ru material is made to stop fully introducing into the MOCVD chamber, Ti material and Zr material are made to start supplying as the Pb material is made to keep supplying. The above state is made to maintain so as to form a PZT film. Ru is restrained from diffusing into the PZT film by the lower conductive compound film, and a leakage current is prevented also from increasing by the lower conductive compound film. COPYRIGHT: (C)2004,JPO&NCIPI
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