| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a quantum semiconductor device and a method of manufacturing the same device in which the electrical access to the quantum dot is made accurately. <P>SOLUTION: The quantum semiconductor device comprises a quantum dot 12 formed over a semiconductor substrate 10, a semiconductor layer 18 formed to embed the quantum dot 12, and an electrode 22 formed at the area over the quantum dot 12 over the surface of the semiconductor layer 18 due to a stress generated to the semiconductor layer 18 because of existence the quantum dot 12. Accordingly, electrical access is made accurately to the quantum dot 12, and moreover independent electrical access is also made to the quantum dot 12. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
