Precursor solution and method for controlling the composition of MOCVD deposited PCMO

摘要

A single solution MOCVD precursor is provided for depositing PCMO. An MOCVD process is provided for controlling the composition of PCMO by determining the deposition rate of each metal component within the precursor solution and determining the molar ratio of the metals based on the deposition rates of each within the temperature ranges for substrate temperature and vaporizer temperature, and the composition of PCMO to be deposited. The composition of the PCMO is further controlled by adjusting the substrate temperature, the vaporizer temperature or both.