发明名称 |
DRIVING METHOD FOR TRANSISTOR, DRIVING METHOD FOR SHIFT REGISTER, AND SHIFT REGISTER FOR IMPLEMENTING SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a driving method for an amorphous silicon thin-film transistor and a driving method for a shift register that prevent current driving capability from becoming lower, and a shift register for implementing the same. <P>SOLUTION: In the driving method for a transistor which has a drain, a source, and a gate, a 1st source voltage is applied to the drain, a 2nd source voltage is applied to the source and a 3rd source voltage which swings at a fixed period in order to lower a threshold voltage having risen owing to deterioration of the transistor below a threshold voltage at which the transistor malfunctions is applied to the gate. Thus, AC electric power source which swings at a fixed period is applied to the gate of the transistor to maintain normal current driving capability even if the transistor deteriorates. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
申请公布号 |
JP2004246358(A) |
申请公布日期 |
2004.09.02 |
申请号 |
JP20040032839 |
申请日期 |
2004.02.10 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
KYO NANSHU;RI KYOON;LEE BACK-WON;KIM JI-HOON;MOON SEUNG-HWAN |
分类号 |
G02F1/133;G09G3/20;G09G3/36;G11C19/00;G11C19/28;H03K17/687 |
主分类号 |
G02F1/133 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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