| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device that is excellent in luminous efficiency and reliability at high productivity. <P>SOLUTION: In the semiconductor light emitting device in which a semiconductor growing layer is formed on a substrate, the side face of the substrate is formed in a roughened surface and the side face of the semiconductor growing layer is formed in a flat mirror-finished surface. Since the side face of the semiconductor light emitting device has two areas of a flat mirror-finished surface area and a roughened surface area at right places, the luminous efficiency and reliability of the light emitting device can be improved by controlling both the emission of internal light and the scattering and reflection of return light. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
