| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of depositing an orientated LiNbO<SB>3</SB>thin film by which a sufficiently crystallized and highly orientated LiNbO<SB>3</SB>thin film can be deposited on a quartz substrate or an SiO<SB>2</SB>film. SOLUTION: In the method of depositing an orientated LiNbO<SB>3</SB>thin film by an electron cyclotron resonance sputtering process using an LiNbO<SB>3</SB>target having a fixed composition, gaseous oxygen is fed in a state where the temperature of a quartz substrate or an SiO<SB>2</SB>film 1 is 430 to 490°C, so that an LiNbO<SB>3</SB>thin film 2 is deposited on the quartz substrate or the SiO<SB>2</SB>film 1. Further, the feed of the gaseous oxygen is performed at a flow rate lower than the one at which an LiNb<SB>3</SB>O<SB>8</SB>phase is formed, and also sufficient for keeping the state where the surface of the LiNbO<SB>3</SB>target is covered with a fixed amount of oxygen atoms. Thus, the orientated LiNbO<SB>3</SB>film can be obtained in the range of extremely limited film deposition conditions on the SiO<SB>2</SB>film 1 or the quartz substrate, and the crystallized and oriented thin film which is suitably utilized as an optical thin film can be obtained. COPYRIGHT: (C)2004,JPO&NCIPI |
