| 摘要 |
PROBLEM TO BE SOLVED: To enable a semiconductor device to be improved in reliability of multilayer interconnection and reduced in wiring resistance at the same time. SOLUTION: The semiconductor device is equipped with a first metal interconnecting line embedded through the intermediary of a first barrier metal in a first wiring groove formed on a first insulating film layer 11 formed on a semiconductor substrate 10, a via-plug 20 of metal film embedded through the intermediary of a second barrier metal 19 in a viahole formed in a third insulating layer 17 on the first metal interconnecting line, and a second metal interconnecting line 25 embedded through the intermediary of a third barrier metal 24 different in thickness from the second barrier metal in a second wiring groove formed in a fourth insulating film layer 22 on the third insulating film layer 17 where the via-plug 20 is embedded. COPYRIGHT: (C)2004,JPO&NCIPI |
