发明名称 |
Etch back of interconnect dielectrics |
摘要 |
An embodiment of the invention is a metal layer 14 of a back-end module 6 where the height of the interconnects 17 is greater than the height of the dielectric regions 20. Another embodiment of the invention is a method of fabricating a semiconductor wafer 4 where the height of the interconnects 17 is greater than the height of the dielectric regions 20.
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申请公布号 |
US2004169279(A1) |
申请公布日期 |
2004.09.02 |
申请号 |
US20030712448 |
申请日期 |
2003.11.12 |
申请人 |
FARBER DAVID G.;TSUI TING;KRAFT ROBERT;HUFFMAN CRAIG |
发明人 |
FARBER DAVID G.;TSUI TING;KRAFT ROBERT;HUFFMAN CRAIG |
分类号 |
H01L21/768;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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