发明名称 SEMICONDUCTOR DEVICE AND THIN FILM FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To improve the adhesion property of an SOG film and a base oxide film. SOLUTION: Recesses and projections in a several ten nanometers order are formed on the surface of the base oxide film 3. Thus, a contact area between the SOG film 6 and the base oxide film 3 is increased, and the adhesion property between the SOG film 6 and the base oxide film 3 is improved. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004247472(A) 申请公布日期 2004.09.02
申请号 JP20030035110 申请日期 2003.02.13
申请人 SEIKO EPSON CORP 发明人 KASUYA YOSHIKAZU
分类号 H01L21/768;H01L21/316;(IPC1-7):H01L21/316 主分类号 H01L21/768
代理机构 代理人
主权项
地址