发明名称 |
REWRITABLE MEMORY WITH NON-LINEAR MEMORY ELEMENT |
摘要 |
A re-writable memory that uses resistive memory cell elements with non-linear IV characteristics is disclosed. Non-linearity is important in certain memory arrays to prevent unselected cells from being disturbed and to reduce the required current. Non-linearity refers to the ability of the element to block the majority of current up to a certain level, but then, once that level is reached, the element allows the majority of the current over and above that level to flow.
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申请公布号 |
US2004170040(A1) |
申请公布日期 |
2004.09.02 |
申请号 |
US20030604556 |
申请日期 |
2003.07.30 |
申请人 |
UNITY SEMICONDUCTOR CORPORATION |
发明人 |
RINERSON DARRELL;CHEVALLIER CHRISTOPHE J.;LONGCOR STEVEN W.;KINNEY WAYNE;WARD EDMOND R.;HSIA STEVE KUO-REN |
分类号 |
G11C13/00;(IPC1-7):G11C19/08 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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