发明名称 |
Oxide high-critical temperature superconductor acicular crystal and its production method |
摘要 |
The present invention relates to a defect-free oxide high-critical temperature superconductor acicular crystal, that is, an oxide high-critical temperature superconductor acicular crystal that is substantially a perfect crystal and also relates to a method for producing the same, wherein such a crystal is essential for achieving superconducting electronic devices. The oxide high-critical temperature superconductor acicular crystal of the present invention includes an acicular crystal having a Bi2Sr2Ca2Cu3O10 (Bi-2223) crystal structure and is grown from a powder compact by heat-treating the powder compact in an oxygen atmosphere, wherein the powder compact contains an oxide having the Bi-2223 crystal structure and TeO2, CaO, or (SrCa)3TeO6. The achievement of the acicular crystal having the Bi-2223 crystal structure contributes to the development of superconducting electronic devices that have been theoretically proposed but have not been achieved.
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申请公布号 |
US2004171493(A1) |
申请公布日期 |
2004.09.02 |
申请号 |
US20040483562 |
申请日期 |
2004.01.13 |
申请人 |
SATO MITSUNORI;YAMASHITA TSUTOMU;MAEDA HIROSHI;KIM SANGJAE;NAGAO MASANORI |
发明人 |
SATO MITSUNORI;YAMASHITA TSUTOMU;MAEDA HIROSHI;KIM SANGJAE;NAGAO MASANORI |
分类号 |
C01G1/00;C01G29/00;C30B1/02;C30B1/04;C30B25/00;C30B29/22;C30B29/62;H01L39/24;(IPC1-7):H01B1/00 |
主分类号 |
C01G1/00 |
代理机构 |
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代理人 |
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地址 |
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