发明名称 |
Aluminum nitride materials and members for use in the production of semiconductors |
摘要 |
An object of the present invention is to provide a novel aluminum nitride material of aluminum nitride base and having a low volume resistivity at room temperature. An aluminum nitride material has aluminum nitride as a main component and europium in a content of 0.03 mole percent or more calculated as the oxide, and the material has aluminum nitride and an europium-aluminum composite oxide phases. Alternatively, an aluminum nitride material has aluminum nitride as a main component and europium and samarium in a total content of 0.09 mole percent or more calculated as the oxides, and the material has aluminum nitride phase and a composite oxide phase containing at least europium and aluminum.
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申请公布号 |
US2004171474(A1) |
申请公布日期 |
2004.09.02 |
申请号 |
US20040785774 |
申请日期 |
2004.02.24 |
申请人 |
NGK INSULATORS, LTD. |
发明人 |
KOBAYASHI YOSHIMASA;HAYASE TORU;TERATANI NAOMI;YOSHIKAWA JUN;YAMADA NAOHITO |
分类号 |
C04B35/581;H01L21/68;H01L21/683;(IPC1-7):C04B35/581 |
主分类号 |
C04B35/581 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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