发明名称 |
FAST SWITCHING POWER INSULATED GATE SEMICONDUCTOR DEVICE |
摘要 |
<p>An insulated gate semiconductor device (30) includes a gate (34), a source terminal, a drain terminal and a variable input capacitance at the gate. A ratio between the input capacitance (Cfiss) when the device is on and the input capacitance Ciiss when the device is off is less than two and preferably substantially equal to one. This is achieved in one embodiment of the invention by an insulation layer (32) at the gate having an effective thickness dins than a minimum thickness.</p> |
申请公布号 |
WO2004066395(A3) |
申请公布日期 |
2004.09.02 |
申请号 |
WO2004ZA00005 |
申请日期 |
2004.01.21 |
申请人 |
THE NORTH WEST UNIVERSITY;VISSER, BAREND;DE JAGER, OCKER, CORNELIS |
发明人 |
VISSER, BAREND;DE JAGER, OCKER, CORNELIS |
分类号 |
H01L25/07;H01L29/423;H01L29/78;H03K17/0412;(IPC1-7):H01L29/78;H03K17/04 |
主分类号 |
H01L25/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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