| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which can suppress corrosion of copper by making a condition that a natural oxide film is formed on the surface of copper by removing a contaminant comprising a fluorine-containing polymer from the surface of exposed copper. SOLUTION: After a wiring layer of a first layer is formed on a semiconductor substrate, a silicon nitride film is formed on the wiring layer of the first layer. Then, a second interlayer insulating film is formed on the silicon nitride film, and after the silicon nitride film is exposed by etching the second interlayer insulating film, via holes are formed by etching the exposed silicon nitride film using a fluorine-containing gas. Subsequently, the first exposed copper layer is subjected to plasma treatment, thus removing the contaminant comprising the fluorine-containing polymer. And then, a second barrier metal film and a second copper layer are deposited on the inner surfaces of the via holes to form via plugs. COPYRIGHT: (C)2004,JPO&NCIPI |
