发明名称 |
Selective silicidation scheme for memory devices |
摘要 |
A memory device and method of manufacturing thereof, wherein a silicide material is selectively formed over active regions of a memory device. A silicide material may also be formed on the top surface of wordlines adjacent the active regions during the selective silicidation process. A single nitride insulating layer is used, and portions of the workpiece are covered with photoresist during the formation of the silicide material.
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申请公布号 |
US2004171213(A1) |
申请公布日期 |
2004.09.02 |
申请号 |
US20030376461 |
申请日期 |
2003.02.28 |
申请人 |
WENSLEY PAUL;FAYAZ MOHAMMED FAZIL;COMMONS MARTIN |
发明人 |
WENSLEY PAUL;FAYAZ MOHAMMED FAZIL;COMMONS MARTIN |
分类号 |
H01L21/336;H01L21/44;H01L21/8234;H01L21/8242;H01L21/8244;H01L27/108;(IPC1-7):H01L21/823;H01L21/824 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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