发明名称 |
Silicon wafer manufacturing method, silicon epitaxial wafer manufacturing method, and silicon epitaxial wafer |
摘要 |
There is provided a method for manufacturing a silicon wafer or a silicon epitaxial wafer capable of imparting an excellent IG capability thereto in a stable manner by simultaneously realizing higher density of oxide precipitates and larger sizes thereof at a stage prior to a device fabrication process. The present invention is a method for manufacturing a silicon wafer wherein the silicon wafer is subjected to heat treatment to impart a gettering capability thereto comprising at least the following three steps of: a temperature raising step A for generating oxygen precipitation nuclei; a temperature raising step B for growing the oxygen precipitation nuclei; and a constant temperature keeping step C for growing the oxygen precipitation nuclei into oxide precipitates of larger sizes.
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申请公布号 |
US2004171234(A1) |
申请公布日期 |
2004.09.02 |
申请号 |
US20040482843 |
申请日期 |
2004.01.06 |
申请人 |
TAKENO HIROSHI |
发明人 |
TAKENO HIROSHI |
分类号 |
H01L21/322;(IPC1-7):H01L21/322 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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