发明名称 |
Dry developing method |
摘要 |
A dry developing method for drawing a resist formed on a processed body by leading processing gas between parallel flat electrodes installed in a vacuum processing container and forming the plasma of the processing gas by applying a high frequency power to the electrodes, comprising the step of plasma-processing the resist on an etched layer having an already developed upper layer resist containing silicon and a lower layer resist installed in contact with the lower layer of the upper layer resist, wherein the lower layer resist is processed by a first process for plasma-processing by using the mixed gas of carbon monoxide gas and oxygen gas and a second step for plasma-processing by using the mixed gas of nitrogen gas and hydrogen gas, whereby an accurate drawing can be applied efficiently to the resist.
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申请公布号 |
US2004169009(A1) |
申请公布日期 |
2004.09.02 |
申请号 |
US20040486828 |
申请日期 |
2004.02.20 |
申请人 |
KITAMURA AKINORI;BALASUBRAMANIAM VAIDYA NATHAN;INAZAWA KOICHIRO;NISHINO MASAHARU |
发明人 |
KITAMURA AKINORI;BALASUBRAMANIAM VAIDYA NATHAN;INAZAWA KOICHIRO;NISHINO MASAHARU |
分类号 |
G03F7/00;G03F7/075;G03F7/09;G03F7/26;G03F7/36;G03F7/40;H01L21/311;(IPC1-7):C23F1/00 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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