| 发明名称 |
Method for fabricating a semiconductor device having an insulation film with reduced water content |
| 摘要 |
A semiconductor device having a self-aligned contact hole is formed by providing a side wall oxide film on a gate electrode, covering the gate electrode and the side wall oxide film by an oxide film and further covering the oxide film by a nitride film, wherein the oxide film is formed by a plasma CVD process with a reduced plasma power such that the H2O content in the oxide film is less than about 2.4 wt %.
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| 申请公布号 |
US2004171224(A1) |
申请公布日期 |
2004.09.02 |
| 申请号 |
US20040793862 |
申请日期 |
2004.03.08 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
SUZUKI KOUSUKE;KARAKAWA KATSUYUKI |
| 分类号 |
H01L21/28;H01L21/316;H01L21/318;H01L21/336;H01L21/60;H01L21/768;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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