| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a fabrication method of a substrate, which comprises only a high-quality nitride crystal of a group 3 element and has a small warp. <P>SOLUTION: A nitride layer of a group 3 element having a gap (seed layer 12 and selective growth layer 15) is formed on a substrate (sapphire substrate 11), and in an atmosphere including nitrogen, a surface of the nitride layer is contacted with a solution containing at least one group 3 element selected from gallium, aluminum and indium and an alkali metal, therefore the at least one group 3 element is made to react with the nitrogen and thus a nitride crystal of the group 3 element (GaN crystal 16) is grown on the nitride layer, and a portion including the substrate is separated from a portion including the nitride crystal in the vicinity of the gap. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
